High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

被引：29

作者：

Pi, Tiantian ^{[1
]}

Xiao, Dongqi ^{[1
]}

Yang, Hui ^{[1
]}

He, Gang ^{[2
]}

Wu, Xiaohan ^{[1
]}

Liu, Wenjun ^{[1
]}

Zhang, David Wei ^{[1
]}

Ding, Shi-Jin ^{[1
]}

机构：

[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[2] Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Amorphous indium gallium zinc oxide (a-IGZO); low thermal budget; microwave annealing (MWA); thin-film transistors (TFTs); FILM; STABILITY;

D O I：

10.1109/TED.2021.3126692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we report high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with atomic layer deposited Al2O3 dielectric processed at a minimal temperature of 189.6 degrees C via microwave annealing ( MWA). The a-IGZO TFT with MWA exhibits an improvement of 57% in subthreshold swing (SS) comparedwith the unannealed device; meanwhile, it retains high field-effect mobility of up to 29.2 cm(2)/(V.s) and large switching ratio of >10(8). Moreover, the SS of the device was further reduced through a two-step MWA treatment. It is believed that MWA treatment effectively reduces the density of trap states associated with oxygen vacancies, promotes the formation of lattice oxygen, and thus improves the quality of IGZO film. MWA with low thermal budget shows great potential in applications of the back-end of line (BEOL)-compatible oxide devices.

引用

页码：156 / 159

页数：4

共 19 条

[1] Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-ZnO Thin-Film Transistors [J].

Chen, Wei-Tsung ;

Lo, Shih-Yi ;

Kao, Shih-Chin ;

Zan, Hsiao-Wen ;

Tsai, Chuang-Chuang ;

Lin, Jian-Hong ;

Fang, Chun-Hsiang ;

Lee, Chung-Chun .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) :1552-1554

[2] Impacts of the Thermal Recovery Process on In-Ga-Zn-O (IGZO) TFTs [J].

Choi, Seung-Ha ;

Lim, Myung-Hoon ;

Jung, Woo-Shik ;

Park, Jin-Hong .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (08) :835-837

[3] Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application [J].

Fuh, Chur-Shyang ;

Liu, Po-Tsun ;

Teng, Li-Feng ;

Huang, Sih-Wei ;

Lee, Yao-Jen ;

Shieh, Han-Ping D. ;

Sze, Simon M. .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (09) :1157-1159

[4] Effect of Microwave Annealing on Transparent In-Ga-ZnO Thin-Film Transistors With Graphene Source and Drain Electrodes [J].

Hong, Eun-Ki ;

Cho, Won-Ju .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (11) :1664-1667

[5] Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors [J].

Hoshino, Ken ;

Hong, David ;

Chiang, Hai Q. ;

Wager, John F. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (07) :1365-1370

[6] Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor [J].

Huang, X. D. ;

Ma, Y. ;

Song, J. Q. ;

Lai, P. T. ;

Tang, W. M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (03) :1009-1013

[7] Improvement in Negative Bias Stress Stability of Solution-Processed Amorphous In-Ga-Zn-O Thin-Film Transistors Using Hydrogen Peroxide [J].

Kwon, Jeong Moo ;

Jung, Joohye ;

Rim, You Seung ;

Kim, Dong Lim ;

Kim, Hyun Jae .

ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (05) :3371-3377

[8] Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review [J].

Lee, Yao-Jen ;

Cho, Ta-Chun ;

Chuang, Shang-Shiun ;

Hsueh, Fu-Kuo ;

Lu, Yu-Lun ;

Sung, Po-Jung ;

Chen, Hsiu-Chih ;

Current, Michael I. ;

Tseng, Tseung-Yuen ;

Chao, Tien-Sheng ;

Hu, Chenming ;

Yang, Fu-Liang .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (03) :651-665

[9] Nanometre-thin indium tin oxide for advanced high-performance electronics [J].

Li, Shengman ;

Tian, Mengchuan ;

Gao, Qingguo ;

Wang, Mengfei ;

Li, Tiaoyang ;

Hu, Qianlan ;

Li, Xuefei ;

Wu, Yanqing .

NATURE MATERIALS, 2019, 18 (10) :1091-+

[10] Rapid Improvement in Thin Film Transistors With Atomic-Layer Deposited InOx Channels via O2 Plasma Treatment [J].

Ma, Qian ;

Shao, Yan ;

Wang, Y. -P. ;

Zheng, H. -M. ;

Zhu, B. ;

Liu, W. -J. ;

Ding, Shi-Jin ;

Zhang, D. W. .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (11) :1672-1675

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