Band structure and optical gain of 1.3 um GaAsSbN/GaAs compressively strained quantum well

被引：0
作者：
Dong, B. [1 ]
Fan, W. J. [1 ]
Dang, Y. X. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore
来源：
SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES | 2008年 / 31卷
关键词：
band Structure; optical gain; quantum well(QW); compressively strained;
D O I：
10.4028/www.scientific.net/AMR.31.95
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 mu m lasing. And, the optical gain spectra with different carrier concentrations will be obtained.
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页码：95 / +
页数：2
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