Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

被引：27

作者：

Hacke, Peter ^{[1
]}

Spataru, Sergiu ^{[2
]}

Johnston, Steve ^{[1
]}

Terwilliger, Kent ^{[1
]}

VanSant, Kaitlyn ^{[1
]}

Kempe, Michael ^{[1
]}

Wohlgemuth, John ^{[1
]}

Kurtz, Sarah ^{[1
]}

Olsson, Anders ^{[3
]}

Propst, Michelle ^{[3
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Aalborg Univ, DK-9220 Aalborg, Denmark

[3] Pearl Labs, Ft Collins, CO 80524 USA

来源：

IEEE Journal of Photovoltaics | 2016年 / 6卷 / 06期

关键词：

CdTe; degradation modeling; high voltage; potential-induced degradation (PID); thin-film modules; POTENTIAL-INDUCED DEGRADATION; PHOTOVOLTAIC MODULES; TEMPERATURE; STRESS;

D O I：

10.1109/JPHOTOV.2016.2598269

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A progression of potential-induced degradation (PID) mechanisms is observed in CdTe modules, which are dependent on the stress level and moisture ingress. This includes shunting, junction degradation, and two different manifestations of series resistance. The dark I-V method for in situ characterization of P-max based on superposition was adapted for the thin-film modules undergoing PID in view of the degradation mechanisms observed. An exponential model based on module temperature and relative humidity (RH) was fit to the PID rate for multiple stress levels in chamber tests and validated by predicting the observed degradation of the module type in the field.

引用

页码：1635 / 1640

页数：6

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