Preparation and characterization of all-oxide CuFeO2:Zn/ZnO:Al transparent heterojunction diode by using all-chemical solution deposition

被引：7

作者：

Asemi, M. ^{[1
]}

Mameghani, H. ^{[1
]}

Ghanaatshoar, M. ^{[1
]}

机构：

[1] Shahid Beheshti Univ, Laser & Plasma Res Inst, Tehran 1983969411, Iran

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2016年 / 80卷 / 01期

关键词：

All-chemical solution deposition; Transparent diode; p-n junction; SOL-GEL METHOD; CUFEO2; THIN-FILMS; PULSED-LASER DEPOSITION; P-N HOMOJUNCTION; OPTOELECTRONIC PROPERTIES; ZNO; CUALO2; FABRICATION; P-SRCU2O2;

D O I：

10.1007/s10971-016-4067-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transparent p-n heterojunction thin-film diodes have been fabricated through an all-chemical solution deposition as a low-cost and large-scale method. In this order, we firstly studied the structural, optical and electrical properties of fabricated n-ZnO:Al and p-CuFeO2:Zn layers. The deposited ZnO:Al thin film showed a transmission more than 90 % in the visible range, and its smooth surface provided a suitable substrate for preparation of the diode. The current-voltage characteristic of the CuFeO2:Zn/ZnO:Al p-n junction demonstrated rectifying property. The diode with a total thickness of 1240 nm exhibited around 60 % optical transparency in the visible region which makes it suitable for invisible electronic and optoelectronic devices.

引用

页码：201 / 207

页数：7

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