Preparation and characterization of all-oxide CuFeO2:Zn/ZnO:Al transparent heterojunction diode by using all-chemical solution deposition

Transparent p-n heterojunction thin-film diodes have been fabricated through an all-chemical solution deposition as a low-cost and large-scale method. In this order, we firstly studied the structural, optical and electrical properties of fabricated n-ZnO:Al and p-CuFeO2:Zn layers. The deposited ZnO:Al thin film showed a transmission more than 90 % in the visible range, and its smooth surface provided a suitable substrate for preparation of the diode. The current-voltage characteristic of the CuFeO2:Zn/ZnO:Al p-n junction demonstrated rectifying property. The diode with a total thickness of 1240 nm exhibited around 60 % optical transparency in the visible region which makes it suitable for invisible electronic and optoelectronic devices.