ENHANCED THIRD GENERATION SEMICONDUCTOR MATERIAL-BASED SOLAR CELL EFFICIENCY BY PIEZO-PHOTOTRONIC EFFECT

By applying the outward uniform strain on the non-centrosymmetric piezoelectric semiconductor, the polarization charges on the material surface are induced. Polarization charges are often generated within the crystals provided that the applied strain is non-uniform. The strain applied has an effect on electronic transport and can be utilized to modulate the properties of the material. The effect of multiway coupling between piezoelectricity, semiconductor transport properties, and photoexcitation results in piezo-phototronic effects. Recent studies have shown the piezoelectric and semiconductor properties of third-generation semiconductors have been used in photodetectors, LEDs, and nanogenerators. The third-generation piezoelectric semiconductor can be used in high-performance photovoltaic cells. A third-generation piezo-phototronic solar cell material is theoretically explored in this manuscript on the basis of a GaN metal-semiconductor interaction. This study aims to determine the effects of piezoelectric polarization on the electrical performance characteristics of this solar cell material. Performance parameters such as Power Conversion Efficiency, Fill Factors, I-V Characteristics, Open Circuit Voltage, and Maximum Output Power have been evaluated. The piezophototronic effect can enhance the open-circuit current voltage by 5.5 percent with an externally applied strain by 0.9 percent. The study will open a new window for the next generation of high-performance piezo-phototronic effects.