Improvement of Passivation Quality by Post-Crystallization Treatments with Different Methods for High Quality Tunnel Oxide Passivated Contact c-Si Solar Cells

被引：0

作者：

Zhang, Zhi ^{[1
]}

Zeng, Yuheng ^{[1
]}

Huang, Yuqing ^{[1
]}

Guo, Xueqi ^{[1
]}

Wang, Zhixue ^{[1
]}

Yang, Qing ^{[1
]}

Shou, Chunhui ^{[2
]}

Yan, Baojie ^{[1
]}

Ye, Jichun ^{[1
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[2] Zhejiang Energy Grp R&D, Hangzhou 310003, Zhejiang, Peoples R China

来源：

2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2019年

关键词：

SILICON; TEMPERATURE;

D O I：

10.1109/pvsc40753.2019.8980516

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report a systematic study of the post-crystallization treatment effects on the passivation quality of tunnel oxide passivated contact (TOPCon) on n-type CZ c-Si wafers with different methods, including thermal annealing in forming gas, and moisture carried by nitrogen, as well as capping with atomic layer deposition (ALD) Al2O3 and plasma-enhanced chemical vapor deposition (PECVD) SiNx:H following a thermal annealing in nitrogen. We found that the annealing at a moderate temperature of similar to 450 degrees C within a mixture of nitrogen and moisture is an effective way for improving the passivation quality, with which a high quality passivation with an implied open circuit voltage (iV(oc)) of 729 mV is achieved. A hydrogen containing capping layer with ALD Al2O3 on the poly-Si contact layer is found to be the most effective way for improving the passivation, with which an outstanding passivation quality with an iV(oc) of 747 mV, effective life time (tau(eff)) of 4.07 ms (Delta n = 5.0x10(15) cm(-3)), and single-side saturated recombination current density (J(0)) of 1.9 fA/cm(2) is attainted. Using the optimized TOPCon passivation layer on solar grade CZ wafers, we achieved a solar cell efficiency of 22.2%.

引用

页码：2215 / 2218

页数：4

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