Plasma relativistic microwave electronics

The principles of plasma relativistic microwave electronics based on the stimulated Cherenkov emission of electromagnetic waves during the interaction of a relativistic electron beam with a plasma are formulated. A theory of relativistic Cherenkov plasma microwave oscillators and amplifiers is developed, and model experimental devices are elaborated and investigated. The emission mechanisms are studied theoretically. The efficiencies and frequency spectra of relativistic Cherenkov plasma microwave oscillators and amplifiers are calculated. The theoretical predictions are confirmed by the experimental data: the power of the devices attains 500 MW, the microwave frequency can be continuously tuned over a wide band with an upper-to-lower boundary frequency ratio of 7 (from 4 to 28 GHz), and the emission frequency bandwidth can be varied from several percent to 100 percent. These microwave sources have no analogs in vacuum microwave electronics. (C) 2001 MAN "Nauka/Interperiodica".