High-performance quantum-dot superluminescent diodes

被引：101

作者：

Zhang, ZY ^{[1
]}

Wang, ZG ^{[1
]}

Xu, B ^{[1
]}

Jin, P ^{[1
]}

Sun, ZZ ^{[1
]}

Liu, FQ ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 01期

基金：

中国国家自然科学基金;

关键词：

crystal growth; quantum dots (QDs); semiconductor laser; superluminescent diodes (SLDs); wavelength-division multiplexing (VMM);

D O I：

10.1109/LPT.2003.820481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By inclining the injection stripe of a multiple layer stacked self-assembled InAs quantum dot (SAQD) laser diode structure of 6degrees with respect to the facets, high-power and broad-band superluminescent diodes (SLDs) have been fabricated. It indicates that high-performance SLD could be easily realized by using SAQD as the active region.

引用

页码：27 / 29

页数：3

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