Room-temperature ultrasonic annealing of radiation defects in silicon

被引：9

作者：

Podolyan, AA ^{[1
]}

Khivrich, VI

机构：

[1] Kiev Natl Univ, Kiev, Ukraine

[2] Natl Acad Sci Ukraine, Inst Nucl Res, Kiev, Ukraine

来源：

TECHNICAL PHYSICS LETTERS | 2005年 / 31卷 / 05期

关键词：

D O I：

10.1134/1.1931783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature ultrasonic annealing of point radiation defects in the bulk of silicon is demonstrated for the first time. The radiation defects in single crystal silicon were generated by the exposure to gamma radiation from a Co-60 source. A qualitative model of processes in the system of radiation defects under the action of ultrasound is proposed. (C) 2005 Pleiades Publishing, Inc.

引用

页码：408 / 410

页数：3

共 11 条

[1]

BOURGOIN J, 1983, SPRINGER SERIES SOLI, V35

[2] CHARGE-CARRIER RECOMBINATION IN SILICON IRRADIATED WITH GAMMA-RAYS OF DIFFERENT ENERGIES [J].