Self-assembled Si/SiO2 superlattice in Si-rich oxide films

被引：10

作者：

Hsiao, Chu-Yun ^{[1
]}

Shih, Chuan-Feng ^{[1
]}

Su, Kuan-Wei ^{[1
]}

Chen, Hui-Ju ^{[1
]}

Fu, Sheng-Wen ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 05期

关键词：

SILICON; PHASE; SYSTEM;

D O I：

10.1063/1.3624706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work involves as-prepared SiOx (x <= 2) films that were deposited by reactive sputtering. The regular Si/SiO2 superlattices were self-assembled without post-annealing. The periodicity of Si/ SiO2 superlattices was modulated by varying the oxygen flow rate and was associated with x in SiOx in the range 2-1.3. Si/SiO2 superlattices were formed under compressive stress and the factors that governed the periodicity were discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3624706]

引用

页数：3

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