Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-k Dielectric/Metal Gate

被引：25

作者：

Kwon, Hyuk-Min ^{[1
]}

Han, In-Shik ^{[1
]}

Bok, Jung-Deuk ^{[1
]}

Park, Sang-Uk ^{[1
]}

Jung, Yi-Jung ^{[1
]}

Lee, Ga-Won ^{[1
]}

Chung, Yi-Sun ^{[2
]}

Lee, Jung-Hwan ^{[2
]}

Kang, Chang Yong ^{[3
]}

Kirsch, Paul ^{[3
]}

Jammy, Raj ^{[3
]}

Lee, Hi-Deok ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, Taejon 305764, South Korea

[2] MagnaChip Semicond, Cheongju 361725, South Korea

[3] SEMATECH, Austin, TX 78741 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Hafnium oxide (HfO2); high-k (HK) dielectric; low-frequency noise; random telegraph signal (RTS) noise; AMPLITUDE; DECANANOMETER;

D O I：

10.1109/LED.2011.2114633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The behavior of I-D random telegraph signal (RTS) noise of a p-MOSFET with an advanced gate stack of HfO2/TaN is experimentally investigated and discussed. The I-D-RTS noise is evaluated on a wafer level (100 sites) for statistical evaluation. The observed ratio of I-D-RTS noise on a wafer is quite similar to that of a p-MOSFET with the conventional plasma-SiON dielectric, which means that the noise distribution on a wafer level is independent of the gate oxide structure and/or material. However, the relative magnitude of change of the drain current to the applied current (Delta I-D/I-D) of the p-MOSFETs with high-k (HK) dielectrics is greater than that of p-MOSFETs with conventional plasma-SiON dielectrics by about six times due to the greater number of preexisting bulk traps in the HK dielectric. Therefore, I-D-RTS noise and its associated 1/f noise can present a serious issue to the CMOSFET with an advanced HK dielectric for low-power analog and mixed-signal applications.

引用

页码：686 / 688

页数：3

共 16 条

[1]

[Anonymous], 2009, IEDM

[2] Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs [J].

Asenov, A ;

Brown, AR ;

Davies, JH ;

Kaya, S ;

Slavcheva, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (09) :1837-1852

[3] RTS amplitudes in decananometer MOSFETs: 3-D Simulation Study [J].

Asenov, A ;

Balasubramaniam, R ;

Brown, AR ;

Davies, JH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) :839-845

[4] A new robust on-wafer 1/f noise measurement and characterization system [J].

Blaum, A ;

Pilloud, O ;

Scalea, G ;

Victory, J ;

Sischka, T .

ICMTS 2001: PROCEEDINGS OF THE 2001 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2001, :125-130

[5] Low frequency noise characterization of 0.25 mu m Si CMOS transistors [J].

Boutchacha, T ;

Ghibaudo, G ;

Guegan, G ;

Haond, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1997, 216 :192-197

[6] Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors [J].

Godoy, A ;

Gamiz, F ;

Palma, A ;

JimenezTejada, JA ;

Carceller, JE .

APPLIED PHYSICS LETTERS, 1997, 70 (16) :2153-2155

[7]

Iwamoto T., 2003, IEDM, P639

[8]

KIRSCH P, 2006, IEDM, P639

[9] N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis [J].

Leyris, C. ;

Martinez, F. ;

Hoffmann, A. ;

Valenza, A. ;

Vildeuil, J. C. .

MICROELECTRONICS RELIABILITY, 2007, 47 (01) :41-45

[10] ON THE GATE-VOLTAGE AND DRAIN-VOLTAGE DEPENDENCE OF THE RTS AMPLITUDE IN SUBMICRON MOSTS [J].

SIMOEN, E ;

DIERICKX, B ;

DECANNE, B ;

THOMA, F ;

CLAEYS, C .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (04) :353-358

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