Soft solution route to directionally grown ZnO nanorod arrays on Si wafer; room-temperature ultraviolet laser

被引：310

作者：

Choy, JH ^{[1
]}

Jang, ES

Won, JH

Chung, JH

Jang, DJ

Kim, YW

机构：

[1] Seoul Natl Univ, Sch Chem & Mol Engn, Natl Nanohybrid Mat Lab, Seoul 151747, South Korea

[2] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 22期

关键词：

D O I：

10.1002/adma.200305327

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A high-quality ZnO nanorod array (NRA) has been successfully grown on a Si wafer by a wet-chemical process, where the Si wafer was dip-coated with 4 nm sized ZnO nanoparticles as a buffer and seed layer prior to the crystal growth. It is found that the as-prepared ZnO NRA has a threshold power density of similar to 70 kW cm(-2), which is comparable to the lowest one determined for ZnO NRAs on Al2O3 substrates (40 kWcm(-2)). The ultraviolet lasing efficiency of the ZnO NRAs is thus similar for both substrates.

引用

页码：1911 / +

页数：5

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