Three-point I-V spectroscopy deconvolves region-specific degradations in LDMOS transistors

Unlike traditional logic transistors, hot carrier degradation (HCD) in power transistors involves simultaneous and potentially correlated degradation in multiple regions. One must deconvolve and characterize the voltage- and temperature-dependence of these region-specific degradations to develop a predictive HCD model of power transistors. Unfortunately, power transistors' doping and geometrical complexities make it challenging to use traditional defect-profiling techniques, such as charge-pumping or gated-diode methods. This Letter uses a physics-based tandem-FET model of an Laterally Diffused MOS (LDMOS) transistor to develop a "three-point I-V spectroscopy " technique that uses the time-evolution of three critical points of the measured I-V characteristics to extract mobility and threshold voltage degradations in the channel and drift regions. This innovative approach should generalize to other configurations of the LDMOS transistor as well. Published under an exclusive license by AIP Publishing.