High-power long-wavelength lasers using GaAs-based quantum dots

被引：0

作者：

Ledentsov, NN ^{[1
]}

Ustinov, VM ^{[1
]}

Shchukin, VA ^{[1
]}

Bimberg, D ^{[1
]}

Lott, JA ^{[1
]}

Alferov, ZI ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

IN-PLANE SEMICONDUCTOR LASERS V | 2001年 / 4287卷

关键词：

quantum dot; heterostructure laser; high-power operation; VCSEL;

D O I：

10.1117/12.429786

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Continuous wave room-temperature output power of similar to3 W for edge-emitters and of about 1 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 mum. Long operation lifetimes are manifested. The breakthrough became possible due to development of self-organized growth and defect-reduction techniques in QD technology. We show that the basic parameters of QD lasers outperform the parameters of the devices fabricated using competing GaAs-based "quantum well" technologies.

引用

页码：71 / 82

页数：12

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