Growth and optical properties of self-assembled InGaAs quantum posts

被引：16

作者：

Krenner, H. J. ^{[1
]}

Pryor, C. ^{[2
]}

He, J. ^{[1
]}

Zhang, J. P. ^{[1
]}

Wu, Y. ^{[1
]}

Morris, C. M. ^{[3
]}

Sherwin, M. S. ^{[3
]}

Petroff, P. M. ^{[1
,4
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA

[3] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 06期

基金：

美国国家科学基金会;

关键词：

quantum dots; quantum posts; molecular beam epitaxy; luminescence; quantum confined stark effect;

D O I：

10.1016/j.physe.2007.09.165

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The interband optical properties are compared to realistic 8-band k.p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1785 / 1789

页数：5

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