Vertical oxide thin-film transistor with interfacial oxidation

被引：14

作者：

Baek, Yeong Jo ^{[1
]}

Kang, In Hye ^{[1
]}

Hwang, Sang Ho ^{[1
]}

Han, Ye Lin ^{[1
]}

Kang, Min Su ^{[1
]}

Kang, Seok Jun ^{[1
]}

Kim, Seo Gwon ^{[1
]}

Woo, Jae Geun ^{[1
]}

Yu, Eun Seong ^{[1
]}

Seong, Byung ^{[1
]}

机构：

[1] Hoseo Univ, Sch Elect & Display Engn, Asan 31499, Chungnam, South Korea

来源：

SCIENTIFIC REPORTS | 2022年 / 12卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1038/s41598-022-07052-3

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor's channel as well as the gate electrode. After definition of the vertical side wall, an IGZO (In-Ga-Zn Oxide) layer was deposited, followed by the interfacial oxidation to form a thin gate insulator. Ta was used for the gate material due to the low Gibbs free energy and high dielectric constant of tantalum oxide. A 15 nm tantalum oxide layer was obtained by the interfacial oxidation of Ta at 400 degrees C under oxygen atmosphere. The thin gate oxide made it possible to operate the transistor under 1 V. The low operation voltage enables low power consumption, which is essential for mobile application.

引用

页数：8

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