Vertical oxide thin-film transistor with interfacial oxidation

被引:10
作者
Baek, Yeong Jo [1 ]
Kang, In Hye [1 ]
Hwang, Sang Ho [1 ]
Han, Ye Lin [1 ]
Kang, Min Su [1 ]
Kang, Seok Jun [1 ]
Kim, Seo Gwon [1 ]
Woo, Jae Geun [1 ]
Yu, Eun Seong [1 ]
Seong, Byung [1 ]
机构
[1] Hoseo Univ, Sch Elect & Display Engn, Asan 31499, Chungnam, South Korea
基金
新加坡国家研究基金会;
关键词
D O I
10.1038/s41598-022-07052-3
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor's channel as well as the gate electrode. After definition of the vertical side wall, an IGZO (In-Ga-Zn Oxide) layer was deposited, followed by the interfacial oxidation to form a thin gate insulator. Ta was used for the gate material due to the low Gibbs free energy and high dielectric constant of tantalum oxide. A 15 nm tantalum oxide layer was obtained by the interfacial oxidation of Ta at 400 degrees C under oxygen atmosphere. The thin gate oxide made it possible to operate the transistor under 1 V. The low operation voltage enables low power consumption, which is essential for mobile application.
引用
收藏
页数:8
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