Vertical oxide thin-film transistor with interfacial oxidation

被引：10

作者：

Baek, Yeong Jo ^{[1
]}

Kang, In Hye ^{[1
]}

Hwang, Sang Ho ^{[1
]}

Han, Ye Lin ^{[1
]}

Kang, Min Su ^{[1
]}

Kang, Seok Jun ^{[1
]}

Kim, Seo Gwon ^{[1
]}

Woo, Jae Geun ^{[1
]}

Yu, Eun Seong ^{[1
]}

Seong, Byung ^{[1
]}

机构：

[1] Hoseo Univ, Sch Elect & Display Engn, Asan 31499, Chungnam, South Korea

来源：

SCIENTIFIC REPORTS | 2022年 / 12卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1038/s41598-022-07052-3

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor's channel as well as the gate electrode. After definition of the vertical side wall, an IGZO (In-Ga-Zn Oxide) layer was deposited, followed by the interfacial oxidation to form a thin gate insulator. Ta was used for the gate material due to the low Gibbs free energy and high dielectric constant of tantalum oxide. A 15 nm tantalum oxide layer was obtained by the interfacial oxidation of Ta at 400 degrees C under oxygen atmosphere. The thin gate oxide made it possible to operate the transistor under 1 V. The low operation voltage enables low power consumption, which is essential for mobile application.

引用

页数：8

共 27 条

[1] One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOy Gate Dielectric [J].

Cai, Wensi ;

Park, Seonghyun ;

Zhang, Jiawei ;

Wilson, Joshua ;

Li, Yunpeng ;

Xin, Qian ;

Majewski, Leszek ;

Song, Aimin .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (03) :375-378

[2] High-performance poly-Si TFT with ultra-thin channel film and gate oxide for low-power application [J].

Chen, Yi-Hsuan ;

Ma, William Cheng-Yu ;

Chao, Tien-Sheng .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (10)

[3] High-Performance a-IGZO Thin-Film Transistor Using Ta2O5 Gate Dielectric [J].

Chiu, C. J. ;

Chang, S. P. ;

Chang, S. J. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) :1245-1247

[4] Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors [J].

Choi, Kwang-Hyuk ;

Kim, Han-Ki .

APPLIED PHYSICS LETTERS, 2013, 102 (05)

[5] Implementation of Low-Power Electronic Devices Using Solution-Processed Tantalum Pentoxide Dielectric [J].

Heo, Jungwoo ;

Park, Song Yi ;

Kim, Jae Won ;

Song, Seyeong ;

Yoon, Yung Jin ;

Jeong, Jaeki ;

Jang, Hyungsu ;

Lee, Kang Taek ;

Seo, Jung Hwa ;

Walker, Bright ;

Kim, Jin Young .

ADVANCED FUNCTIONAL MATERIALS, 2018, 28 (28)

[6] Highly Sensitive Active-Matrix Driven Self-Capacitive Fingerprint Sensor based on Oxide Thin Film Transistor [J].

Jeon, Guk-Jin ;

Lee, Seung-Hwan ;

Lee, Seung Hee ;

Shim, Jun-Bo ;

Ra, Jong-Hyun ;

Park, Kyoung Woo ;

Yeom, Hye-In ;

Nam, Yunyong ;

Kwon, Oh-Kyong ;

Park, Sang-Hee Ko .

SCIENTIFIC REPORTS, 2019, 9 (1)

[7] Low-Temperature Polysilicon Oxide Thin-Film Transistors with Coplanar Structure Using Six Photomask Steps Demonstrating High Inverter Gain of 264 V V-1 [J].

Jeong, Duk Young ;

Chang, Yeoungjin ;

Yoon, Won Gyeong ;

Do, Youngbin ;

Jang, Jin .

ADVANCED ENGINEERING MATERIALS, 2020, 22 (04)

[8] Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates [J].

Kim, Hyeong-Rae ;

Furuta, Mamoru ;

Yoon, Sung-Min .

ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (11) :2363-2370

[9] Flexible vertical-channel thin-film transistors using In-Ga-Zn-O active channel and polyimide spacer on poly(ethylene naphthalate) substrate [J].

Kim, Hyeong-Rae ;

Yang, Ji-Hee ;

Kim, Gi-Heon ;

Yoon, Sung-Min .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2019, 37 (01)

[10] Homojunction Solution-Processed Metal Oxide Thin-Film Transistors Using Passivation-Induced Channel Definition [J].

Kim, Jung Hyun ;

Rim, You Seung ;

Kim, Hyun Jae .

ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (07) :4819-4822

← 1 2 3 →