ZnO nanostructure networks grown on silicon substrates

被引：16

作者：

Xu, WZ ^{[1
]}

Ye, ZZ ^{[1
]}

Zhu, LP ^{[1
]}

Zeng, YJ ^{[1
]}

Liu, J ^{[1
]}

Zhao, BH ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 277卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

crystal morphology; nanaostructures; metalorganic chemical vapor deposition; zinc compounds;

D O I：

10.1016/j.jcrysgro.2005.02.013

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Quasi-three-dimensional (3D) ZnO nanostructure networks have been grown on silicon substrate by metalorganic chemical vapor deposition (MOCVD). The nanostructures are composed of 1D nanowires and 2D nanowalls. The nanowalls in the nanostructures were g-rowing along [0 0 0 1] and vertically standing on the silicon substrate. Energy dispersive X-ray spectroscopy (EDX) measurement shows that the ZnO nanostructures are 0 rich. Room-temperature photoluminescence (PL) measurement reveals strong ultraviolet (UV) emission and weak green emission, which demonstrates that the nanostructures are with good optical properties. The mechanism of synthesis of the ZnO nanostructure networks is proposed. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：490 / 495

页数：6

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