A piezoresistive microcantilever array for surface stress measurement: curvature model and fabrication

被引:24
|
作者
Choudhury, Arnab [1 ]
Hesketh, Peter J.
Thundat, Thomas
Hu, Zhiyu
机构
[1] Georgia Inst Technol, GW Sch Mech Engn, Atlanta, GA 30332 USA
[2] Oak Ridge Natl Lab, Biosci Div, Oak Ridge, TN 37831 USA
关键词
D O I
10.1088/0960-1317/17/10/019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a procedure for the fabrication of a piezoresistive microcantilever array for surface-stress-based chemical and biochemical sensing applications. All existing microcantilever surface stress sensors that are based on single-crystal silicon use p-doped piezoresistors. In this work, the advantages of using n-doped silicon piezoresistors for surface stress sensing have been demonstrated. Further, a new model for surface-stress-sensitive cantilevers, based on classical laminated plate theory, is presented. This model allows for the estimation of the deformation and piezoresistive response of a multilayered microcantilever to surface stresses during analyte measurement and residual stresses in the structural layers due to fabrication processes. Also, the model accounts for bending-stretching coupling in the microcantilever response to the stresses. The utility of the model as a design tool for control of cantilever curvature during the fabrication process has been demonstrated.
引用
收藏
页码:2065 / 2076
页数:12
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