Dielectric properties of Ba(ZrxTi1-x)O3 thin films prepared using radio frequency magnetron sputtering

Pt/Ba(ZrxTi1-x)O-3/Pt/Ti/SiO2/Si capacitors were fabricated using radio frequency (rf) magnetron sputtering. The deposition parameter effects on the dielectric constant, capacitance, and leakage current density of the capacitors were investigated. Amorphous Ba(ZrxTi1-x)O-3 (BZ(x)T(1-x)) thin films were sputtered onto a substrate with a temperature of 300 degreesC, rf power of 130 W, and in a no-oxygen atmosphere. BZ(x)T(1-x) thin films deposited onto Pt-coated Si substrates show a preferred orientation in the (100) reflection. The dielectric constants of the BZ(x)T(1-x) thin films increased with increasing Zr content and deposition temperature. The diffuse phase transition behavior of the BZ(x)T(1-x) thin films became more pronounced at high Zr content films. The leakage current density of the Pt/Ba(ZrxTi1-x)O-3/Pt/Ti/SiO2/Si capacitors at 1 kV/cm was about 1.0x10(-7) A/cm(2). This increased with increasing deposition temperature but decreased with increasing O-2/(O-2+Ar) ratio. From the films, P-E hysteresis loops, the BZ(0.1)T(0.9) thin films had ferroelectric characteristics. The BZ(0.3)T(0.7) thin films exhibited paraelectric characteristics at room temperature. (C) 2003 American Institute of Physics.