Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

被引：103

作者：

Fang, ZQ ^{[1
]}

Look, DC

Jasinski, J

Benamara, M

Liliental-Weber, Z

Molnar, RJ

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[3] MIT, Lincoln Lab, Lexington, MA 02173 USA

[4] USAF, Mat & Mfg Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 03期

关键词：

D O I：

10.1063/1.1338970

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron-irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects. (C) 2001 American Institute of Physics.

引用

页码：332 / 334

页数：3

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