InAs/GaAs lasers with very thin active layer

被引：5

作者：

Oswald, J ^{[1
]}

Hulicius, E ^{[1
]}

Pangrác, J ^{[1
]}

Melichar, K ^{[1
]}

Simecek, T ^{[1
]}

Petrícek, O ^{[1
]}

Vancura, M ^{[1
]}

Hradil, J ^{[1
]}

机构：

[1] Inst Phys, Prague 16253, Czech Republic

来源：

THIN SOLID FILMS | 2000年 / 380卷 / 1-2期

关键词：

quantum well; InAs; GaAs; electroluminescence; laser;

D O I：

10.1016/S0040-6090(00)01513-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InAs/GaAs laser structures based on atomically thin InAs strained quantum wells were prepared by metal-organic vapour phase epitaxy. The dependence of electroluminescence spectra on the thickness, as well as on the number of InAs quantum wells, was studied. The temperature dependence of the mode structure and optical output power were studied in the range from 25 to 100 degreesC. The position of laser emission can be shifted by changing the thickness and the number of InAs active layers from 1.15 to 1.4 eV. Wavelength switching with increasing operating temperature and excitation current was observed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：233 / 236

页数：4

共 7 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].