Design of a Highly Efficient 2-4-GHz Octave Bandwidth GaN-HEMT Power Amplifier

被引：135

作者：

Saad, Paul ^{[1
]}

Fager, Christian ^{[1
]}

Cao, Haiying ^{[1
]}

Zirath, Herbert ^{[1
]}

Andersson, Kristoffer ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2010年 / 58卷 / 07期

关键词：

GaN HEMT; high efficiency; octave bandwidth; power amplifier (PA); wideband matching networks; WIDE-BAND;

D O I：

10.1109/TMTT.2010.2049770

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the design, implementation, and experimental results of a high-efficiency wideband GaN-HEMT power amplifier are presented. A method based on source-pull/load-pull simulation has been used to find optimum source and load impedances across the bandwidth and then used with a systematic approach to design wideband matching networks. Large-signal measurement results show that, across 1.9-4.3 GHz, 9-11-dB power gain and 57%-72% drain efficiency are obtained while the corresponding power-added efficiency (PAE) is 50%-62%. Moreover, an output power higher than 10 W is maintained over the band. Linearized modulated measurements using a 20-MHz long-term evolution signal with 11.2-dB peak-to-average ratio show an average PAE of 27% and 25%, an adjacent channel leakage ratio of -44 and -42 dBc at 2.5 and 3.5 GHz, respectively.

引用

页码：1677 / 1685

页数：9