Mechanism of secondary recrystallization of Goss grains in grain-oriented electrical steel

被引:47
作者
Hayakawa, Yasuyuki [1 ]
机构
[1] JFE Steel Corp, Steel Res Lab, Kurashiki, Okayama, Japan
关键词
Grain-oriented electrical steel; secondary recrystallization; primary recrystallization; texture; grain growth; inhibitor; BOUNDARY-CHARACTER-DISTRIBUTION; MONTE-CARLO SIMULATIONS; 110; 001; ORIENTATION; SILICON-IRON STRIP; TEXTURE DEVELOPMENT; FE-3-PERCENT SI; GROWTH; ALLOYS; MODEL; SURFACE;
D O I
10.1080/14686996.2017.1341277
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Since its invention by Goss in 1934, grain-oriented (GO) electrical steel has been widely used as a core material in transformers. GO exhibits a grain size of over several millimeters attained by secondary recrystallization during high-temperature final batch annealing. In addition to the unusually large grain size, the crystal direction in the rolling direction is aligned with <001>, which is the easy magnetization axis of alpha-iron. Secondary recrystallization is the phenomenon in which a certain very small number of {110}<001> (Goss) grains grow selectively (about one in 106 primary grains) at the expense of many other primary recrystallized grains. The question of why the Goss orientation is exclusively selected during secondary recrystallization has long been a main research subject in this field. The general criterion for secondary recrystallization is a small and uniform primary grain size, which is achieved through the inhibition of normal grain growth by fine precipitates called inhibitors. This paper describes several conceivable mechanisms of secondary recrystallization of Goss grains mainly based on the selective growth model. [Grapics]
引用
收藏
页码:480 / 497
页数:18
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