Contribution of TADF and exciplex emission for efficient "warm-white" OLEDs

被引:68
作者
Grybauskaite-Kaminskiene, Gintare [1 ]
Ivaniuk, Khrystyna [2 ]
Bagdziunas, Gintautas [1 ]
Turyk, Pavlo [2 ]
Stakhira, Pavlo [2 ]
Baryshnikov, Gleb [3 ,4 ]
Volyniuk, Dmytro [1 ]
Cherpak, Vladyslav [5 ]
Minaev, Boris [3 ,4 ]
Hotra, Zenon [2 ,6 ]
Agren, Hans [3 ,7 ]
Grazulevicius, Juozas Vidas [1 ]
机构
[1] Kaunas Univ Technol, Dept Polymer Chem & Technol, Radvilenu Plentas 19, LT-50254 Kaunas, Lithuania
[2] Lviv Polytech Natl Univ, S Bandera 12, UA-79013 Lvov, Ukraine
[3] KTH Royal Inst Technol, Sch Biotechnol, Div Theoret Chem & Biol, S-10691 Stockholm, Sweden
[4] Bohdan Khmelnytsky Natl Univ, Shevchenko 81, UA-18031 Cherkassy, Ukraine
[5] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[6] Rzeszow Univ Technol, W Pola 2, PL-35959 Rzeszow, Poland
[7] Siberian Fed Univ, Inst Nanotechnol Spect & Quantum Chem, Svobodny Pr 79, Krasnoyarsk 660041, Russia
关键词
LIGHT-EMITTING-DIODES; ACTIVATED DELAYED FLUORESCENCE; HIGHLY EFFICIENT; HOST MATERIAL; DERIVATIVES; CARBAZOLE; ELECTROLUMINESCENCE; ENHANCEMENT; CONVERSION; MECHANISM;
D O I
10.1039/c7tc05392d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The bicarbazole derivative 4,4'-(9H, 9'H-[3,3'-bicarbazole]-9,9'-diyl) bis(3-(trifluoromethyl) benzonitrile), denoted as pCNBCzoCF(3), was synthesized and tested for white OLED applications. pCNBCzoCF3 demonstrated an extremely small value of the singlet-triplet energy gap that caused intensive thermally activated delayed fluorescence (TADF). In addition, this compound is able to form exciplex-type excited states at the interface with star-shaped 4,40,400-tris[phenyl(m-tolyl) amino] triphenylamine (m-MTDATA). Combining the TADF emission of pCNBCzoCF3 with the exciplex emission from the pCNBCzoCF(3) m-MTDATA interface, we fabricated a number of highly efficient "warm-white'' OLEDs, the electroluminescence of which was close to candle emission. The best device demonstrated a very high brightness of 40 900 Cd m(-2) (at 15 V), current efficiency of 53.8 Cd A(-1) and power efficiency of 19.3 lm W-1, while the external quantum efficiency reached 18.8%. The fabricated devices demonstrated high emission characteristics even for the standard test at 1000 Cd m(-2) (current efficiency of 46.2 Cd A(-1), power efficiency of 10.6 lm W-1, EQE of 17.0%).
引用
收藏
页码:1543 / 1550
页数:8
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