A facile tool for the characterization of two-dimensional materials grown by chemical vapor deposition

被引:28
作者
Hofmann, Mario [1 ]
Shin, Yong Cheol [2 ]
Hsieh, Ya-Ping [3 ]
Dresselhaus, Mildred S. [4 ]
Kong, Jing [1 ]
机构
[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[3] Chung Cheng Univ, Grad Inst Optomechatron, Taipei, Taiwan
[4] MIT, Dept Phys, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
Two-dimensional materials; graphene; analysis; chemical vapor deposition; HEXAGONAL BORON-NITRIDE; LARGE-AREA; RAMAN-SPECTROSCOPY; GRAPHENE DOMAINS; ATOMIC LAYERS; MEMBRANES; FILMS;
D O I
10.1007/s12274-012-0227-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The metrology of two-dimensional (2D) materials such as graphene, boron nitride or molybdenum disulfide grown by chemical vapor deposition (CVD) is critical for the optimization of their synthesis. We demonstrate the use of film-induced frustrated etching (FIFE) as a facile, scalable method to reveal and quantify structural defects in continuous thin sheets. The sensitivity of the analysis technique to intentionally induced lattice defects in graphene compares favorably to the sensitivity of Raman spectroscopy. A strong correlation between the measured defectiveness and the maximum carrier mobility in graphene emphasizes the importance of the technique for growth optimization. Due to its ease and widespread availability, we anticipate that FIFE will find wide application in the characterization of CVD-synthesized 2D materials.
引用
收藏
页码:504 / 511
页数:8
相关论文
共 31 条
[1]   Probing the electron-phonon coupling in ozone-doped graphene by Raman spectroscopy [J].
Alzina, F. ;
Tao, H. ;
Moser, J. ;
Garcia, Y. ;
Bachtold, A. ;
Sotomayor-Torres, C. M. .
PHYSICAL REVIEW B, 2010, 82 (07)
[2]  
Banhart F, 2011, ACS NANO, V5, P26, DOI [10.1021/nn102598m, 10.1016/B978-0-08-102053-1.00005-3]
[3]   Light-induced frustration of etching in Fe-doped LiNbO3 [J].
Barry, IE ;
Eason, RW ;
Cook, G .
APPLIED SURFACE SCIENCE, 1999, 143 (1-4) :328-331
[4]   Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst [J].
Bhaviripudi, Sreekar ;
Jia, Xiaoting ;
Dresselhaus, Mildred S. ;
Kong, Jing .
NANO LETTERS, 2010, 10 (10) :4128-4133
[5]   PHOTOINDUCED LUMINESCENCE FROM THE NOBLE-METALS AND ITS ENHANCEMENT ON ROUGHENED SURFACES [J].
BOYD, GT ;
YU, ZH ;
SHEN, YR .
PHYSICAL REVIEW B, 1986, 33 (12) :7923-7936
[6]   Impermeable atomic membranes from graphene sheets [J].
Bunch, J. Scott ;
Verbridge, Scott S. ;
Alden, Jonathan S. ;
van der Zande, Arend M. ;
Parpia, Jeevak M. ;
Craighead, Harold G. ;
McEuen, Paul L. .
NANO LETTERS, 2008, 8 (08) :2458-2462
[7]   Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies [J].
Cancado, L. G. ;
Jorio, A. ;
Martins Ferreira, E. H. ;
Stavale, F. ;
Achete, C. A. ;
Capaz, R. B. ;
Moutinho, M. V. O. ;
Lombardo, A. ;
Kulmala, T. S. ;
Ferrari, A. C. .
NANO LETTERS, 2011, 11 (08) :3190-3196
[8]   Defect Scattering in Graphene [J].
Chen, Jian-Hao ;
Cullen, W. G. ;
Jang, C. ;
Fuhrer, M. S. ;
Williams, E. D. .
PHYSICAL REVIEW LETTERS, 2009, 102 (23)
[9]   Oxidation Resistance of Graphene-Coated Cu and Cu/Ni Alloy [J].
Chen, Shanshan ;
Brown, Lola ;
Levendorf, Mark ;
Cai, Weiwei ;
Ju, Sang-Yong ;
Edgeworth, Jonathan ;
Li, Xuesong ;
Magnuson, Carl W. ;
Velamakanni, Aruna ;
Piner, Richard D. ;
Kang, Junyong ;
Park, Jiwoong ;
Ruoff, Rodney S. .
ACS NANO, 2011, 5 (02) :1321-1327
[10]   Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO2-Supported Graphene Devices [J].
Cheng, Zengguang ;
Zhou, Qiaoyu ;
Wang, Chenxuan ;
Li, Qiang ;
Wang, Chen ;
Fang, Ying .
NANO LETTERS, 2011, 11 (02) :767-771