Resistive Switching Phenomena in LixCoO2 Thin Films

被引：31

作者：

Moradpour, Alec ^{[1
]}

Schneegans, Olivier ^{[2
,3
]}

Franger, Sylvain ^{[4
]}

Revcolevschi, Alexandre ^{[4
]}

Salot, Raphael ^{[5
]}

Auban-Senzier, Pascale ^{[1
]}

Pasquier, Claude ^{[1
]}

Svoukis, Efthymios ^{[6
]}

Giapintzakis, John ^{[6
]}

Dragos, Oana ^{[4
]}

Ciomaga, Vasile-Cristian ^{[4
]}

Chretien, Pascal ^{[2
,3
]}

机构：

[1] Univ Paris 11, CNRS, UMR C8502, Phys Solides Lab, F-91405 Orsay, France

[2] Univ Paris 06, Lab Genie Elect Paris, CNRS, UMR 8507, F-91192 Gif Sur Yvette, France

[3] Univ Paris 11, Lab Genie Elect Paris, CNRS, UMR 8507, F-91192 Gif Sur Yvette, France

[4] Univ Paris 11, Inst Chim Mol & Mat Orsay, Lab Phys Chim Etat Solide, CNRS,UMR 8182, F-91405 Orsay, France

[5] CEA LITEN, F-38054 Grenoble 09, France

[6] Univ Cyprus, Dept Mech & Mfg Engn, CY-1678 Nicosia, Cyprus

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 36期

关键词：

SRTIO3; COEXISTENCE; MEMORIES; LICOO2;

D O I：

10.1002/adma.201101800

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Resistive Switching Phenomena in LixCoO2 Thin Films A substantial resistive switching of LixCoO2 mixed-conductor thin films is observed for the first time. The occurrence of possible bipolar switching in these oxide thin films is suggested by current-voltage curves, investigated by conducting-probe atomic force microscopy (CP-AFM). The films are incorporated into an {Au/LixCoO2/p++Si} device and exhibit a significant resistive switching process involving a ratio of over four orders of magnitude.

引用

页码：4141 / +

页数：6

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