Adjustable electromagnetically induced transparency based on terahertz metamaterial embedded with vanadium dioxide

被引:0
作者
Wu, Xiaoting [1 ]
Wang, Wei [1 ,2 ]
Liu, Chi [1 ]
Zhang, Ying [1 ,2 ]
Sun, Yide [1 ]
机构
[1] Yunnan Normal Univ, Sch Phys & Elect Informat, Kunming, Yunnan, Peoples R China
[2] Yunnan Key Lab Optoelect Informat Technol, Kunming, Yunnan, Peoples R China
来源
AOPC 2021: INFRARED DEVICE AND INFRARED TECHNOLOGY | 2021年 / 12061卷
基金
中国国家自然科学基金;
关键词
Electromagnetically induced transparency; metamaterial; vanadium dioxide; terahertz;
D O I
10.1117/12.2602352
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An adjustable electromagnetically induced transparency (EIT) metamaterial embedded with vanadium dioxide (VO2) is demonstrated at terahertz (THz) region. The unit cell of the metamaterial consists of a quartz substrate and two parallel wire metal resonators with different length on top layer. The two ends of the shorter wire metal resonator are filled with VO2. The short wire metal resonator (SWMR) and the long wire metal resonator (LWMR) are acted as bright mode, which can be directly coupled with the incident THz wave to produce the EIT. Due to the insulator-to-metal transition of VO2, the amplitude of EIT peak can be actively modulated and the modulation is implemented only in the EIT window with slight changes in transmission dips. When VO2 is transformed from the insulating phase to the metallic phase with the conductivity changed from 2x10(2) S/m to 2x10(5) S/m, the amplitude of the EIT peak can decrease from 0.91 to 0.03, which indicates that the EIT metamaterial achieves a large modulation depth. The physical mechanism of this phenomenon is explained by the magnetic field and current distributions. In addition, it is found that the slow-light effect gradually weakens and disappears with VO2 changing from the insulating phase to the metallic phase. This work provides a strategy to achieve an adjustable EIT effect in THz metamaterial structure embedded with VO2 and exhibits potential applications in THz modulators and slow-light devices.
引用
收藏
页数:7
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