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Study on Properties of Fully Etched Bragg Grating Waveguide Filters
被引:1
作者:
Liu Qifa
[1
,2
]
Zhu Lihui
[1
]
Xu Xu
[1
]
Feng Kerui
[1
]
Cheng Xiefeng
[2
]
机构:
[1] Nanjing Univ Posts & Telecommun, Coll Telecommun & Informat Engn, Nanjing 210003, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Microas, Nanjing 210003, Peoples R China
关键词:
Bragg grating;
Waveguide filter;
Full-etched;
FDTD simulation;
Refractive index contrast;
Wavelength tuning coefficient;
Narrow band filtering;
SILICON PHOTONICS;
D O I:
10.3788/gzxb20215011.1105001
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
A fully etched Bragg grating filter based on Silicon-On-Insulator(SOI)waveguide is proposed. The full-etched feature makesthe tuning on Bragg wavelength more sensitive and efficient,which can be fabricated by one-step top silicon etching. The simulation results show that the wavelength-period tuning coefficient of 33 nm/nm and 11 nm/nm for the first- and third-order gratings are obtained respectively, groove refractive index tuning has a coefficient of 1 nm/0.006. Combining low refractive index contrast of grating bar and groove with higher grating order,the full-etched grating filter with a narrower bandwidth at 1 550 nm band can be realized.
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页数:12
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