On the chloride vapor-phase epitaxy growth of GaN and its characterization

被引：14
作者：
Varadarajan, E [1 ]
Puviarasu, P [1 ]
Kumar, J [1 ]
Dhanasekaran, R [1 ]
机构：
[1] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 260卷 / 1-2期
关键词：
photoluminescence; Raman scattering; X-ray diffraction; vapor phase epitaxy; gallium nitride;
D O I：
10.1016/j.jcrysgro.2003.08.021
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In this article, we present details on the fabrication of the chloride vapor-phase epitaxy (Cl-VPE) system for the growth of gallium nitride (GaN). Growth of GaN on (0 0 0 1) sapphire substrates has been carried out at different growth temperatures while keeping the flow rate of the carrier gas as a constant. The crystalline and optical qualities of GaN grown layers by Cl-VPE were evaluated as a function of the growth temperature. An X-ray diffractometer and Raman scattering studies are used to determine the structural properties of the film. The optical properties are evaluated using a UV-absorption spectrometer and photo luminescence studies at room temperature. The quality of the films grown at different temperatures is compared. The optimum conditions to realize good crystal structure and smoother surface morphology have been obtained and reported. (C) 2003 Elsevier B.V. All rights reserved.
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收藏
页码：43 / 49
页数：7
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