Surface termination and Schottky-barrier formation of In4Se3(001)

被引：17

作者：

Dhingra, Archit ^{[1
]}

Galiy, Pavlo, V ^{[2
]}

Wang, Lu ^{[3
]}

Vorobeva, Nataliia S. ^{[4
]}

Lipatov, Alexey ^{[4
]}

Torres, Angel ^{[4
]}

Nenchuk, Taras M. ^{[2
]}

Gilbert, Simeon J. ^{[1
]}

Sinitskii, Alexander ^{[4
]}

Yost, Andrew J. ^{[5
]}

Mei, Wai-Ning ^{[6
]}

Fukutani, Keisuke ^{[1
,8
]}

Chen, Jia-Shiang ^{[7
]}

Dowben, Peter A. ^{[1
]}

机构：

[1] Univ Nebraska, Dept Phys & Astron, Jorgenson Hall,855 North 16th St, Lincoln, NE 68588 USA

[2] Ivan Franko Lviv Natl Univ, Elect Dept, Lvov, Ukraine

[3] Univ Sci & Technol China, CAS Key Lab Mat Energy Convers, Hefei, Peoples R China

[4] Univ Nebraska, Dept Chem, Lincoln, NE 68588 USA

[5] Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA

[6] Univ Nebraska, Dept Phys, Omaha, NE 68182 USA

[7] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

[8] Inst Basic Sci IBS, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2020年 / 35卷 / 06期

基金：

美国国家科学基金会;

关键词：

quasi-1D trichalcogenide; surface termination; surface-to-bulk core level shift; Schottky barrier; In4Se3; HIGH THERMOELECTRIC PERFORMANCE; GRAPHENE NANORIBBONS; PHOTOELECTRON DIFFRACTION; CRYSTAL-STRUCTURE; OHMIC CONTACTS; SEMICONDUCTOR; TRANSITION; TRANSPORT; STATES; ATOMS;

D O I：

10.1088/1361-6641/ab7e45

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface termination of In4Se3(001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C-2v mirror plane symmetry. The surface termination of the In4Se3(001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In4Se3(001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.

引用

页数：9

共 60 条

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