1.55 μm GaNAsSb photodetector on GaAs -: art. no. 211121

被引：22

作者：

Luo, H ^{[1
]}

Gupta, JA ^{[1
]}

Liu, HC ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 21期

关键词：

D O I：

10.1063/1.1940722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a GaNAsSb p-i-n photodetector operating in the 1.55-mu m-wavelength region. The device consists of two undoped 70-A GaN0.025As0.615Sb0.36 quantum wells sandwiched between p- and n- GaAs barriers grown by molecular-beam epitaxy on GaAs substrate. At 1.55 mu m, responsivities of 0.016 and 0.01 A/W are demonstrated for as-deposited and annealed samples, respectively, which correspond to absorption coefficients of 1.3x10(4) and 0.82x10(4) cm(-1). (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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