Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN

被引：31

作者：

Khromov, S. ^{[1
]}

Hemmingsson, C. G. ^{[1
]}

Amano, H. ^{[2
]}

Monemar, B. ^{[1
]}

Hultman, L. ^{[1
]}

Pozina, G. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden

[2] Nagoya Univ, Dept Elect Engn & Comp Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 07期

基金：

瑞典研究理事会;

关键词：

BULK GAN; ELECTRONIC-STRUCTURE; DOPED GAN;

D O I：

10.1103/PhysRevB.84.075324

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of Mg doping on stacking fault (SF) formation in c-plane GaN grown by metal-organic chemical-vapor deposition has been studied for Mg concentration between 2 x 10(18) cm(-3) and 5 x 10(19) cm(-3). Transmission electron microscopy studies demonstrate a direct correlation between the increasing Mg content and the number of small (3-10-nm long) SFs present. The energy dispersive x-ray analysis (EDX) line profile of a SF shows that the Mg-impurity atom resides at a distance approximately 5 nm from the SF. Cathodoluminescence (CL) mapping reveals that the Mg-doped regions radiate at energies corresponding to known SF emission peaks. SF-related peaks in CL spectra show metastability, which may be attributed to transfer processes involving Mg acceptors and nearby associated SFs.

引用

页数：6

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