Investigation of gamma-radiation on electronic and optical properties in carbon δ-doping GaAs/AlGaAs HEMTs structures

被引：1

作者：

Daoudi, Mahmoud ^{[1
]}

Kaouach, Houda ^{[2
,3
]}

Hosni, Faouzi ^{[1
]}

机构：

[1] Ctr Natl Sci & Technol Nucl, Lab Rech Energie & Mat Dev Sci Nucl, Sidi Thabet 2020, Tunisia

[2] Umm Al Qura Univ, Dept Phys, Univ Coll, Al Qunfoza, Saudi Arabia

[3] Umm Al Qura Univ, Unit Res Ctr, Al Qunfoza, Saudi Arabia

来源：

OPTIK | 2016年 / 127卷 / 18期

关键词：

Gamma radiation; Carbon delta-doping; Activation energy; Photoluminescence; BAND-GAP SHIFT; RAY IRRADIATION; PHOTOLUMINESCENCE; ENERGY; ABSORPTION; SPECTRA;

D O I：

10.1016/j.ijleo.2016.05.057

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on an experimental investigation of gamma radiation effects on the electronic and optical properties in carbon delta-doping GaAs/AlGaAs High Electron Mobility Transistors (HEMT) structures. Photoluminescence measurements are used to determine the electron-hole relaxation processes in the GaAs channel. For global information on the carriers dynamics in the structures examined, we studied their interactions with the crystal lattice, thermal activation states defects, the energy level activation. Gamma radiation has changed the electronic and optical properties in GaAs/AlGaAs structures, especially.the carriers thermal activation. (C) 2016 Elsevier GmbH. All rights reserved.

引用

页码：7188 / 7192

页数：5

共 28 条

[1] Photoluminescent and paramagnetic centers in gamma irradiated porous silica
Anedda, A
Carbonaro, CM
Corpino, R
Agnello, S
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2005, 351 (21-23) : 1784 - 1786
[2] Ben Sedrine N., 2007, AM J APPL SCI, V4, P19
[3] Numerical simulation of the temperature distortions in InGaP/GaAs/Ge solar cells working under high concentrating conditions due to voids presence in the solder joint
Calabrese, G.
Gualdi, F.
Baricordi, S.
Bernardoni, P.
Guidi, V.
Pozzetti, L.
Vincenzi, D.
[J]. SOLAR ENERGY, 2014, 103 : 1 - 11
[4] Photoluminescence characterization of GaAs/GaAs0.64P0.19 Sb0.17/GaAs heterostructure
Chen, J. Y.
Chen, B. H.
Huang, Y. S.
Chin, Y. C.
Tsai, H. S.
Lin, H. H.
Tiong, K. K.
[J]. JOURNAL OF LUMINESCENCE, 2013, 136 : 178 - 181
[5] Optical band-gap shift in (InAs)GaAs/AlGaAs HEMTs structures studied by photoluminescence spectroscopy
Daoudi, M.
Kaouach, H.
Dhifallah, I.
Ouerghi, A.
Chtourou, R.
[J]. OPTIK, 2015, 126 (9-10): : 932 - 936
[6] Energy band-gap shift with gamma-ray radiation and carbon n-delta-doping in GaAs/AlGaAs QWs structures
Daoudi, M.
Hosni, F.
Khalifa, N.
Dhifallah, I.
Farah, K.
Hamzaoui, A. H.
Ouerghi, A.
Chtourou, R.
[J]. PHYSICA B-CONDENSED MATTER, 2014, 440 : 113 - 117
[7] Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures
Daoudi, M.
Dhifallah, I.
Ouerghi, A.
Chtourou, R.
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2012, 51 (04) : 497 - 505
[8] Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight
Guter, Wolfgang
Schoene, Jan
Philipps, Simon P.
Steiner, Marc
Siefer, Gerald
Wekkeli, Alexander
Welser, Elke
Oliva, Eduard
Bett, Andreas W.
Dimroth, Frank
[J]. APPLIED PHYSICS LETTERS, 2009, 94 (22)
[9] Jeganathan K, 1999, CRYST RES TECHNOL, V34, P1293, DOI 10.1002/(SICI)1521-4079(199912)34:10<1293::AID-CRAT1293>3.0.CO
[10] 2-X

← 1 2 3 →