Low Temperature Processed InGaZnO Oxide Thin Film Transistor Using Ultra-Violet Irradiation

被引：14

作者：

Cho, S. H. ^{[1
]}

Choi, M. J. ^{[2
]}

Chung, K. B. ^{[2
]}

Park, J. S. ^{[3
]}

机构：

[1] Dankook Univ, Dept Phys, Cheonan 330714, South Korea

[2] Dongguk Univ, Div Phys & Semicond Sci, Seoul 100715, South Korea

[3] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2015年 / 11卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

oxide thin film transistor; ultra-violet irradiation; low temperature process; electronic structure; PERFORMANCE; FABRICATION; IMPROVEMENT; STABILITY; LASER; TFTS;

D O I：

10.1007/s13391-015-4442-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Device performance and bias stability of InGaZnO (IGZO) thin film transistors (TFTs) were investigated as a function of post-treatment with the combination of ultra-violet (UV) irradiation and thermal annealing. Under low temperature annealing at 150 degrees C after UV irradiation, the device performance and bias stability of IGZO TFTs were enhanced with field effect mobility of 10.14 cm(2)/Vs and Delta V-th below 0.5 V. The electrical characteristics of IGZO TFTs improved without a change in the physical structure and the origin of enhanced device performance can be explained by the changes of the oxygen coordination and the evolution of the electronic structures, such as the band edge states and band alignment of the Fermi level within the bandgap.

引用

页码：360 / 365

页数：6

共 26 条

[21] The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source-drain structure [J].