The stark effect and electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots

被引:0
|
作者
Skolnick, MS [1 ]
Fry, PW [1 ]
Itskevich, IE [1 ]
Mowbray, DJ [1 ]
Barker, JA [1 ]
O'Reilly, EP [1 ]
Hopkinson, M [1 ]
Al-Khafaji, M [1 ]
Cullis, AG [1 ]
Hill, C [1 ]
Clark, JC [1 ]
机构
[1] Univ Sheffield, Dept Phys, Sheffield S3 7RH, S Yorkshire, England
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中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
New information on the electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots is obtained from study of the quantum confined Stark effect. From the sign of asymmetry observed in the Stark effect, it is deduced that the dots have a permanent dipole moment directed from base to apex, implying that holes are localised above the electrons in the dots. This highly unexpected electron-hole alignment is opposite to that predicted by all previous theories. We explain our results by comparison with strain/electronic structure modelling, and are able to deduce that the nominally InAs dots contain significant amounts of gallium, and have a strongly truncated shape. In the light of these results most if not all previous modelling of the electronic structure of InAs self-assembled quantum dots needs to be re-examined. The mechanisms involved in the photocurrent process employed to observe the Stark effect, and the significance of photocurrent techniques to measure absorption spectra in quantum dots are discussed.
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页码:337 / 346
页数:10
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