High Speeds Complementary Integrated Circuits Fabricated with All-Printed Polymeric Semiconductors

被引：96

作者：

Baeg, Kang-Jun ^{[1
,2
]}

Khim, Dongyoon ^{[2
]}

Kim, Dong-Yu ^{[2
]}

Jung, Soon-Won ^{[1
]}

Koo, Jae Bon ^{[1
]}

You, In-Kyu ^{[1
]}

Yan, Henry ^{[3
]}

Facchetti, Antonio ^{[3
]}

Noh, Yong-Young ^{[1
,4
]}

机构：

[1] ETRI, Convergence Components & Mat Res Lab, Taejon 305350, South Korea

[2] GIST, Dept Nanobio Mat & Elect, Heeger Ctr Adv Mat, Kwangju 500712, South Korea

[3] Polyera Corp, Skokie, IL 60077 USA

[4] Hanbat Natl Univ, Dept Chem Engn, Taejon 305719, South Korea

来源：

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS | 2011年 / 49卷 / 01期

关键词：

flexible electronics; inkjet printing; organic electronics; organic field-effect transistors; TRANSISTORS; ELECTRONICS; PENTACENE; TRANSPORT;

D O I：

10.1002/polb.22148

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Inkjet-printed high speed polymeric complementary circuits are fabricated using an n-type ([poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-dithiophene)} [P(NDI2OD-T2), Polyera ActivInk N2200] and two p-type polymers [poly(3-hexylthiophene) (P3HT) and a dithiophene-based polymer (Polyera ActivInk P2100)]. The top-gate/bottom-contact (TG/BC) organic field-effect transistors (OFETs) exhibit well-balanced and very-high hole and electron mobilities (mu(FET)) of 0.2-0.5 cm(2)/Vs, which were enabled by optimization of the inkjet-printed active features, small contact resistance both of electron and hole injections, and effective control over gate dielectrics and its orthogonal solvent effect (selection of poly(methyl methacrylate) and 2-ethoxyethanol). Our first demonstrated inkjet-printed polymeric complementary devices have been integrated to high-performance complementary inverters (gain >30) and ring oscillators (oscillation frequency similar to 50 kHz). We believe that the operating frequency of printable organic circuits can be further improved more than 10 MHz by fine-tuning of the device architecture and optimization of the p- and n-channel semiconductor processing. (C) 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 49: 62-67, 2011

引用

页码：62 / 67

页数：6

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