Magnetic field tuning of hot electron resonant capture in a semiconductor device

被引：3
作者：
Spasov, S.
Allison, G.
Patane, A. [1 ]
Ignatov, A.
Eaves, L.
Maude, D. K.
Hopkinson, M.
Airey, R.
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] CNRS, Grenoble High Magnet Field Lab, F-38042 Grenoble, France
[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S3 3JD, S Yorkshire, England
[4] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 14期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2794407
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study hot-electron capture on resonant N-impurities in the dilute nitride Ga(AsN) alloy under high magnetic fields up to 23 T. We show that when the ratio of electric and magnetic fields reaches a critical value, the trajectory of conduction electrons becomes fully localized in real space; this leads to a negative differential conductance and current instabilities tuneable by magnetic field. (C) 2007 American Institute of Physics.
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页数：3
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