Chemical etch studies of Ag/n-Si metal-semiconductor composite films

被引：1
作者：
Diagne, I
White, J
Ndoye, M
Bates, CW [1 ]
Thurber, WR
机构：
[1] Howard Univ, CREST, Ctr Nanomat Characterizat Sci & Proc Technol, Washington, DC 20059 USA
[2] Howard Univ, Dept Elect Engn, Ctr Nanomat Characterizat Sci & Proc Technol, Washington, DC 20059 USA
[3] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
来源：
MATERIALS LETTERS | 2005年 / 59卷 / 13期
基金：
美国国家科学基金会;
关键词：
Ag/n-Si composite films; segregated Ag particles in the surface layer; chemical etching; hall measurements;
D O I：
10.1016/j.matlet.2005.01.032
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The 2.5-mu m-thick Ag/n-Si composite films were prepared by magnetron co-sputtering Ag and n-type Silicon targets on Si(111) substrates that were held at 400 degrees C during deposition. They were then treated with chemical etchants to remove the film of segregated Ag particles in the surface layer. This process was required in order to measure the electronic transport properties of the unsegregated portion of the film for use in photoelectronic applications. Surface resistivity measurements in conjunction with chemical etch treatments were used to characterize the progress of the etch treatments. Small resistivity changes between successive etches indicated that the segregated Ag layer had been successfully removed. Hall measurements were made on films before and after the complete removal of this layer. (c) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码：1640 / 1643
页数：4
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