Synthesis and laser processing of ZnO nanocrystalline thin films

被引:61
作者
Ozerov, I
Nelson, D
Bulgakov, AV
Marine, W
Sentis, M
机构
[1] Fac Sci Luminy, UMR 6631 CNRS, GPEC, F-13288 Marseille 9, France
[2] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] RAS, SB, Inst Thermophys, Novosibirsk 630090, Russia
[4] Fac Sci Luminy, FRE 2165 CNRS, LP3, F-13288 Marseille 9, France
关键词
zinc oxide; nanoclusters; laser ablation; photoluminescence; laser annealing;
D O I
10.1016/S0169-4332(03)00100-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present the results of experiments on synthesis of ZnO nanoclusters by reactive pulsed laser deposition (PLD). The nanoclusters were formed and crystallised in the gas phase and deposited on SiO2 substrates. The nanostructured films were characterised by conventional photoluminescence (PL). The PL spectra consist of a narrow UV excitonic band and a broad visible band related to defects in the film. The film preparation conditions such as the substrate temperature, ambient gas nature and pressure, were optimised in order to increase the intensity of excitonic emission and prevent the formation of defects. A post-growth annealing by UV laser radiation improved the optical quality of the deposited films. The photoluminescence intensity was found to be dependent significantly on the laser fluence and on the number of shots per site. The nature of the defects responsible for the observed luminescence in a visible range is discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:349 / 352
页数:4
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