Dynamics of resistance switching induced by charge carrier fluence

被引：2

作者：

Buh, Gyoung-Ho ^{[1
]}

Hwang, Inrok ^{[2
]}

Park, Bae Ho ^{[2
]}

机构：

[1] Korean Intellectual Property Off, Semicond Examinat Div, Taejon 302701, South Korea

[2] Konkuk Univ, Sch Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 07期

关键词：

HIGH-SPEED; POWER;

D O I：

10.1063/1.3489938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the dynamics of reversible resistance switching of NiO nonvolatile memory devices by measuring the switching time as a function of applied voltage. A model of local switching induced by charge carrier fluence was proposed to explain the time-dependent switching behaviors. Charge carrier flow under Poole-Frenkel emission builds up local conductive paths inside NiO. The enhanced electric field at the ends of conductive clusters abruptly increases local Poole-Frenkel emission and accelerates the percolation propagation. The results of Monte Carlo calculation strongly supported the model of local switching induced by charge carrier fluence. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489938]

引用

页数：3

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