Structural and optical properties of sintered ZnSxSe1-x films

被引：51

作者：

Kumar, V ^{[1
]}

Sharma, TP ^{[1
]}

机构：

[1] CCS Univ, Dept Phys, Meerut 250004, Uttar Pradesh, India

来源：

OPTICAL MATERIALS | 1998年 / 10卷 / 04期

关键词：

band gap; screen printing; reflection spectra; semiconductors;

D O I：

10.1016/S0925-3467(98)00003-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sintered ZnSxSe1 - x films have been prepared in the entire composition range from ZnSe to ZnS by using the screen printing method. To deposit good quality films, optimum conditions have been determined. Wide band gap ternary films have wide applications in solar cells. The band gap of these films are determined by reflection spectra in the wavelength range of 325-600 nm using the Tauc relation. These films have a direct band gap, which varies from 3.50 eV for ZnS to 2.66 eV for ZnSe films. The wurtzite structure of ZnSSe films was confirmed by X-ray diffraction analysis of these films. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：253 / 256

页数：4

共 6 条

[1]

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[2] BLUE-GREEN DIODE-LASERS [J].