Extended-wavelength InGaAsSb infrared unipolar barrier detectors

被引：7

作者：

Hao, Hongyue ^{[1
,2
]}

Wang, Guowei ^{[1
,2
]}

Han, Xi ^{[1
,2
]}

Jiang, Dongwei ^{[1
,2
]}

Sun, Yaoyao ^{[1
,2
]}

Guo, Chunyan ^{[1
,2
]}

Xiang, Wei ^{[1
,2
]}

Xu, Yingqiang ^{[1
,2
]}

Niu, Zhichuan ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

来源：

AIP ADVANCES | 2018年 / 8卷 / 09期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

III-V semiconductors - Indium antimonides - Gallium alloys - Dark currents - Gallium compounds;

D O I：

10.1063/1.5026839

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb absorb layer and AlGaAsSb unipolar barrier can achieve high material quality and low dark current. The dark current density was 2.29x10(-5) A/cm(2) at 0 bias at 77K. At room temperature the dark current at 0 bias was 4x10(-3) A/cm(2) and the R(0)A is high to 44 Omega . cm(2). We fabricated the cone arrays in the InGaAsSb absorb layer to reduce the reflection of the radiation and extend the spectrum response to visible area. The extended-wavelength detector had the response from the wavelength of 0.4 mu m. Further experiment showed the cone arrays also reduced the dark current of the detector at room temperature. (C) 2018 Author(s).

引用

页数：6

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