Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

被引：21

作者：

Dogan, H. ^{[1
]}

Korkut, H. ^{[1
]}

Yildirim, N. ^{[1
]}

Turut, A. ^{[1
]}

机构：

[1] Ataturk Univ, Fac Sci & Arts, Dept Phys, TR-25240 Erzurum, Turkey

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 18期

关键词：

Schottky barrier diodes; metal-semi conductor contacts; barrier inhomogeneities; GaAs;

D O I：

10.1016/j.apsusc.2007.03.029

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have identically prepared Ni/n-GaAs/In Schottky barrier diodes (SBDs) with doping density of 7.3 x 10(15) cm(-3). The barrier height for the Ni/n-GaAs/In SBDs from the current-voltage characteristics have varied from 0.835 to 0.856 eV, and ideality factor n from 1.02 to 1.08. We have determined a lateral homogeneous barrier height value of 0.862 eV for the Ni/n-GaAs/In SBD from the experimental linear relationship between barrier heights and ideality factors. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：7467 / 7470

页数：4