Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

被引：21
作者：
Dogan, H. [1 ]
Korkut, H. [1 ]
Yildirim, N. [1 ]
Turut, A. [1 ]
机构：
[1] Ataturk Univ, Fac Sci & Arts, Dept Phys, TR-25240 Erzurum, Turkey
来源：
APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 18期
关键词：
Schottky barrier diodes; metal-semi conductor contacts; barrier inhomogeneities; GaAs;
D O I：
10.1016/j.apsusc.2007.03.029
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have identically prepared Ni/n-GaAs/In Schottky barrier diodes (SBDs) with doping density of 7.3 x 10(15) cm(-3). The barrier height for the Ni/n-GaAs/In SBDs from the current-voltage characteristics have varied from 0.835 to 0.856 eV, and ideality factor n from 1.02 to 1.08. We have determined a lateral homogeneous barrier height value of 0.862 eV for the Ni/n-GaAs/In SBD from the experimental linear relationship between barrier heights and ideality factors. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：7467 / 7470
页数：4
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