Z1/Z2 defects in 4H-SiC -: art. no. 225502

被引：61

作者：

Eberlein, TAG ^{[1
]}

Jones, R

Briddon, PR

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] Newcastle Univ, Sch Nat Sci, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.90.225502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

First-principles calculations are carried out on models for the Z(1)/Z(2) defects in 4H-SiC which are found in as-grown and irradiated n-type material. We show that an interstitial-nitrogen-interstitial-carbon defect is exceptionally thermally stable, bistable, and has negative-U character with donor and acceptor levels close to those attributed to the defect.

引用

页数：4

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