Dark current characteristics of quantum wire infrared photodetectors

被引：11
作者：
Nasr, A.
Aboshosha, A.
Al-Adl, S. M.
机构：
[1] Radiation Engineering Department, NCRRT, Atomic Energy Authority
来源：
IET OPTOELECTRONICS | 2007年 / 1卷 / 03期
关键词：
D O I：
10.1049/iet-opt:20060089
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper focuses on the performance of quantum-wire infrared photodetectors (QRIPs) under dark condition. The effects of the average quantum wire density, the lateral size and the operating temperature on the behaviour of this device are studied. The superiority of QRIPs over the quantum-dot infrared photodetectors (QDIPs), which give lower and stable increasing dark current, is illustrated clearly. A distinct improvement of the responsivity and detectivity of QRIPs compared to QDIPs has been perceived. The theoretical analysis confirms that the stability of QRIPs is affected by the operating temperature.
引用
收藏
页码：140 / 145
页数：6
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