Single- and few-layer graphene growth on stainless steel substrates by direct thermal chemical vapor deposition

被引:87
作者
John, Robin [2 ]
Ashokreddy, A. [1 ]
Vijayan, C. [2 ]
Pradeep, T. [1 ]
机构
[1] Indian Inst Technol, Dept Chem, DST Unit Nanosci DST UNS, Madras 600036, Tamil Nadu, India
[2] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
关键词
D O I
10.1088/0957-4484/22/16/165701
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Increasing interest in graphene research in basic sciences and applications emphasizes the need for an economical means of synthesizing it. We report a method for the synthesis of graphene on commercially available stainless steel foils using direct thermal chemical vapor deposition. Our method of synthesis and the use of relatively cheap precursors such as ethanol (CH3CH2OH) as a source of carbon and SS 304 as the substrate proved to be economically viable. The presence of single-and few-layer graphene was confirmed using confocal Raman microscopy/spectroscopy. X-ray photoelectron spectroscopic measurements were further used to establish the influence of various elemental species present in stainless steel on graphene growth. The role of cooling rate on surface migration of certain chemical species (oxides of Fe, Cr and Mn) that promote or hinder the growth of graphene is probed. Such analysis of the chemical species present on the surface can be promising for graphene based catalytic research.
引用
收藏
页数:7
相关论文
共 25 条
  • [1] Bai JW, 2010, NAT NANOTECHNOL, V5, P190, DOI [10.1038/NNANO.2010.8, 10.1038/nnano.2010.8]
  • [2] Chill Out
    Balandin, Alexander A.
    [J]. IEEE SPECTRUM, 2009, 46 (10) : 34 - 39
  • [3] Selective oxidation synthesis of MnCr2O4 spinel nanowires from commercial stainless steel foil
    Chen, Yongjun
    Liu, Zongwen
    Ringer, Simon P.
    Tong, Zhangfa
    Cui, Xuemin
    Chen, Ying
    [J]. CRYSTAL GROWTH & DESIGN, 2007, 7 (11) : 2279 - 2281
  • [4] Synthesis of Graphene and Its Applications: A Review
    Choi, Wonbong
    Lahiri, Indranil
    Seelaboyina, Raghunandan
    Kang, Yong Soo
    [J]. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2010, 35 (01) : 52 - 71
  • [5] Ci L, 2010, NAT MATER, V9, P430, DOI [10.1038/nmat2711, 10.1038/NMAT2711]
  • [6] Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
    Das, A.
    Pisana, S.
    Chakraborty, B.
    Piscanec, S.
    Saha, S. K.
    Waghmare, U. V.
    Novoselov, K. S.
    Krishnamurthy, H. R.
    Geim, A. K.
    Ferrari, A. C.
    Sood, A. K.
    [J]. NATURE NANOTECHNOLOGY, 2008, 3 (04) : 210 - 215
  • [7] CHARACTERIZATION OF SURFACE OXIDES BY RAMAN-SPECTROSCOPY
    FARROW, RL
    BENNER, RE
    NAGELBERG, AS
    MATTERN, PL
    [J]. THIN SOLID FILMS, 1980, 73 (02) : 353 - 358
  • [8] Raman spectrum of graphene and graphene layers
    Ferrari, A. C.
    Meyer, J. C.
    Scardaci, V.
    Casiraghi, C.
    Lazzeri, M.
    Mauri, F.
    Piscanec, S.
    Jiang, D.
    Novoselov, K. S.
    Roth, S.
    Geim, A. K.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (18)
  • [9] NOVEL APPLICATIONS OF RAMAN MICROSCOPY
    GARDINER, DJ
    BOWDEN, M
    GRAVES, PR
    [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1986, 320 (1554): : 295 - 306
  • [10] Graphene: Status and Prospects
    Geim, A. K.
    [J]. SCIENCE, 2009, 324 (5934) : 1530 - 1534