Analyses of early stages of vertically aligned carbon nanotube growth by plasma-enhanced chemical vapor deposition

被引:12
作者
Hayashi, Y [1 ]
Watanabe, Y [1 ]
Ueda, K [1 ]
Nishino, S [1 ]
机构
[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4A期
关键词
carbon nanotube; aligned carbon nanotubes; plasma-enhanced CVD; ellipsometry; XPS; early stage; ion bombardment; catalytic metal;
D O I
10.1143/JJAP.44.1549
中图分类号
O59 [应用物理学];
学科分类号
摘要
The pretreatment and early stages of aligned carbon nanotube (CNT) growth by hot-filament-assisted plasmas-enhanced chemical vapor deposition have been analyzed by scanning electron microscopy, X-ray photoelectron spectroscopy, and in situ ellipsometry. It was found that the effect of pretreatment on the aligned growth is due to the formation of finer catalyst particles through sputtering by ions accelerated in a sheath electric field. It was also found that the optimum growth temperature affects the aligned growth of CNTs. Poorly aligned growth at the higher temperatures is due to the insufficient formation of finer catalyst particles under the competition with coalescence. To align the growth of CNTs, fine catalyst particles smaller than a certain size are required.
引用
收藏
页码:1549 / 1553
页数:5
相关论文
共 50 条
  • [21] Synthesis of carbon nanotubes on metal substrates by plasma-enhanced chemical vapor deposition
    Kim, HS
    Park, SY
    Yang, JH
    Park, CY
    ON THE CONVERGENCE OF BIO-INFORMATION-, ENVIRONMENTAL-, ENERGY-, SPACE- AND NANO-TECHNOLOGIES, PTS 1 AND 2, 2005, 277-279 : 950 - 955
  • [23] An overview of selected catalytic chemical vapor deposition parameter for aligned carbon nanotube growth
    Azam, Mohd Asyadi (asyadi@utem.edu.my), 1600, Bentham Science Publishers (04): : 2 - 30
  • [24] Growth of carbon nanowalls on a SiO2 substrate by microwave plasma-enhanced chemical vapor deposition
    Tanaka, K
    Yoshimura, M
    Okamoto, A
    Ueda, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4A): : 2074 - 2076
  • [25] Growth of high-quality carbon nanotubes by grid-inserted plasma-enhanced chemical vapor deposition for field emitters
    Kojima, Y
    Kishimoto, S
    Ohno, Y
    Sakai, A
    Mizutani, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2600 - 2603
  • [26] High-rate growth of films of dense, aligned double-walled carbon nanotubes using microwave plasma-enhanced chemical vapor deposition
    Hiramatsu, M
    Nagao, H
    Taniguchi, M
    Amano, H
    Ando, Y
    Hori, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (20-23): : L693 - L695
  • [27] Low-temperature plasma-enhanced chemical vapor deposition of hard carbon films
    Vinogradov, AY
    Abramov, AS
    Orlov, KE
    Smirnov, AS
    VACUUM, 2004, 73 (01) : 131 - 135
  • [28] Low-temperature growth of carbon nanotubes by grid-inserted plasma-enhanced chemical vapor deposition
    Kojima, Yoshihiro
    Kishimoto, Shigeru
    Mizutani, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (12): : 8000 - 8002
  • [29] Development of Silicon-Embedded Supercapacitors Utilizing Atomic Layer Deposition and Plasma-Enhanced Chemical Vapor Deposition for Functionalization of Carbon Nanotube Electrodes
    Ravi Konjeti
    Julia Allen
    Stephan Turano
    Mike Kranz
    Brian English
    Jud Ready
    Journal of Electronic Materials, 2021, 50 : 5037 - 5048
  • [30] Effects of the Gate Dielectric on the Subthreshold Transport of Carbon Nanotube Network Transistors Grown by Using Plasma-enhanced Chemical Vapor Deposition
    Jeong, Seung Geun
    Park, Wanjun
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 56 (02) : 598 - 601